| PART |
Description |
Maker |
| MGFC42V6472 |
6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
6.4-7.2 GHz Band 16W Internally Matched GaAs FET
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MAAP-000076-PKG001 MAAP-000076-SMB001 MAAP-000076- |
Amplifier, Power, 16W 1.3-2.5 GHz
|
http://
MACOM[Tyco Electronics]
|
| MGFC42V3742A |
3.7- 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC42V374204 MGFC42V3742 |
3.7 ~ 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V4450 |
4.4 - 5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FMPA2151 |
2.4 - 2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power
2.4-2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power Amplifier Module (Preliminary)
|
Fairchild Semiconductor
|
| LQP03TN4N7H04 LQP03TN5N1H04 AN26024A GRM33B30J104K |
Ultra small, Single Band LNA-IC for 2.4 GHz Band Applications
|
Panasonic Battery Group
|
| TGA4501-EPU |
28-31 GHz Ka Band HPA 28000 MHz - 31000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
TriQuint Semiconductor,Inc.
TriQuint Semiconductor, Inc.
|
| HMC398QS16G06 HMC398QS16G 398QS16GE |
8Ku-Band MMIC VCO with DIVIDE-BY-8, 14.0 - 15.0 GHz
8nullKu-Band MMIC VCO with DIVIDE-BY-8, 14.0 - 15.0 GHz
|
Hittite Microwave Corporation
|
